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MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant
Features
Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs Rugged Fully Monolithic, Glass Encapsulated Chip with Polymer Protection Coating Up to +30dBm C.W. Power Handling @ +25C Rev. V7
MA4SW110
Description
The MA4SW110, MA4SW210 and MA4SW310 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM's patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 , AuSn solder or conductive Ag epoxy.
MA4SW210
MA4SW310
Absolute Maximum Ratings @ TA +25C Parameter Absolute Maximum Operating Temperature -65oC to +125oC Storage Temperature -65oC to +150oC Junction Temperature +175oC Applied Reverse Voltage - 50V RF C.W. Incident Power +30dBm C.W. Bias Current +25C 20mA Max. operating conditions for a combination of RF power, D.C. bias and temperature: +30dBm CW @ 15mA (per diode) @+85C
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ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant
MA4SW110 (SPST) Electrical Specifications @ TA = +25oC, 20mA Parameter Frequency Minimum
Insertion Loss 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz 46 39 34 22 15 14 -
Rev. V7
Nominal
0.4 0.5 0.7 55 47 42 31 33 27 20 0.2
Maximum
0.7 0.9 1.2 50 -
Units
dB dB dB dB dB dB dB dB dB ns V dB
Isolation
Input Return Loss Switching Speed1 Voltage Rating2 Signal Compression (500mW)
MA4SW210 (SPDT) Electrical Specifications @ TA = +25oC, 20mA
Parameter
Insertion Loss
1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10A maximum at -50 volts.
Frequency
6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz
Minimum
48 40 34 20 18 15 -
Nominal
0.4 0.5 0.7 63 50 42 27 25 25 20 0.2
Maximum
0.7 1.0 1.2 50 -
Units
dB dB dB dB dB dB dB dB dB ns V dB
Isolation
Input Return Loss Switching Speed1 Voltage Rating2 Signal Compression (500mW)
MA4SW310 (SP3T) Electrical Specifications @ TA = +25oC, 20mA
Parameter
Insertion Loss
1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10A maximum at -50 volts.
Frequency
6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz
Minimum
49 42 33 20 14 11 -
Nominal
0.5 0.7 0.9 57 48 42 24 22 21 20 0.2
Maximum
0.8 1.1 1.5 50 -
Isolation
Input Return Loss Switching Speed1 Voltage Rating2 Signal Compression (500mW)
2
Units dB dB dB dB dB dB dB dB dB ns V dB
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant Typical Performance Curves at TA = +25C, 20mA Bias Current
MA4SW110
RETURN LOSS vs. FREQUENCY
-10 LOSS (dB) Output Return Loss LOSS (dB) -15 -20 -25 -30 -35 0 5 10 15 20 25 30 FREQUENCY (GHz) -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0 5 10 15 20 FREQUENCY (GHz) 25 30
Rev. V7
MASW110
INSERTION LOSS vs. FREQUENCY
Input Return Loss
MA4SW210
RETURN LOSS vs. FREQUENCY
-10 -15 LOSS (dB) -20 -25 Input Return Loss -30 -35 0 5 10 15 20 25 30 FREQUENCY (GHz)
LOSS (dB) -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0
MA4SW210
INSERTION LOSS vs. FREQUENCY
Output Return Loss
5
10 15 20 FREQUENCY (GHz)
25
30
MA4SW310
RETURN LOSS vs. FREQUENCY
-10 LOSS (dB) Output Return Loss
LOSS (dB) -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -1.1 -1.2 0
MA4SW310
INSERTION LOSS vs. FREQUENCY
-15 -20
Input Return Loss -25 -30 0 5 10 15 20 25 30 FREQUENCY (GHz)
5
10
15
20
25
30
FREQUENCY (GHz)
S-Parameters: S-Parameter data is available upon request.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant Typical Performance Curves @ TA = +25C, 20mA Bias Current
MA4SW110
ISOLATION vs. FREQUENCY
-35 -40 -45 -50 -55 -60 -65 -70 -75 -80 0 5 10 15 20 25 30 FREQUENCY (GHz) ISOLATION (dB)
LOSS (dB)
Rev. V7
INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz
-22 -24 -26 -28 -30 -32 -34 0 5 10 15
MA4 S W3 10 MA4 S W2 10 MA4 S W110
20 25 30 35 CURRENT (mA)
40
45
50
55
OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz
-21.5 -22 -22.5 -23 -23.5 -24 -24.5 -25 -25.5 0 5 10 15 20 25 30 35 CURRENT (mA)
MA4SW210
ISOLATION vs. FREQUENCY
-35 -40 -45 -50 -55 -60 -65 -70 -75 -80 0 5 10 15 20 FREQUENCY (GHz) 25 30 ISOLATION (dB)
LOSS (dB)
MA4 S W110 MA4 S W3 10 MA4 S W2 10
40
45
50
55
INSERTION LOSS vs. BIAS CURRENT @ 10 GHz
-0.35 -0.4 -0.45 -0.5 -0.55 -0.6 -0.65 -0.7 0 5 10 15 20 25 30 35 CURRENT (mA)
MA4 S W2 10 MA4 S W110 MA4 S W3 10
MA4SW310
ISOLATION vs. FREQUENCY
-35 -40 -45 -50 -55 -60 -65 -70 -75 -80 0 5 10 15 20 FREQUENCY (GHz) 25 30
LOSS (dB)
40
45
50
55
ISOLATION (dB)
ISOLATION vs. BIAS CURRENT @ 10 GHz
-46 -47 -48 -49 -50 -51 -52 -53 -54 0 5 10 15 20 25 30 35 CURRENT (mA) 40
ISOLATION (dB)
MA4 S W110 MA4 S W2 10 MA4 S W3 10
45
50
55
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant
Operation of the MA4SW Series Switches
Operation of the MA4SW series of PIN switches is achieved by simultaneous application of a negative DC current to the low loss switching arm J1, J2, or J3, and a positive DC current to the remaining switching arms as shown in the bias connection circuits. DC return is achieved via J1. The control currents should be supplied by constant current sources. The voltages at these points will not exceed +1.5 volts (1.2 volts typical) at currents up to + 20mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. In the isolated arm, the shunt diode is forward biased and the series diode is reverse biased. MA4SW110 and Bias Connections1
J1 RF INPUT
Rev. V7
20pF
20nH J2 BIAS 20pF 100 20nH
20pF
20pF
Switch Chip
J2 RF OUTPUT
Driver Connections
MA4SW110
Control Level DC Current @
J2 -20mA +20mA
Condition of RF Output
J1-J2 Low Loss Isolation
MA4SW210 and Bias Connections1
J1 RF INPUT 20pF J3 BIAS 20nH J2 BIAS
MA4SW210
20nH
100 20pF 20pF 20nH 20pF
Control Level DC Current @
J2 -20mA +20mA J3 +20mA -20mA
Condition of RF Output
J1-J2 Low Loss Isolation
Condition of RF Output
J1-J3 Isolation Low Loss
20pF J3 RF OUTPUT
Switch Chip
20pF
J2 RF OUTPUT
MA4SW310 and Bias Connections1 MA4SW310
Control Level DC Current @
J2 -20mA +20mA +20mA J3 +20mA -20mA +20mA J4 +20mA +20mA -20mA
J1 RF INPUT 20pF J4 BIAS 20nH J2 BIAS
Cond. of Cond. of RF Output RF Output
J1-J2 Low Loss Isolation Isolation J1-J3 Isolation Low Loss Isolation
Cond. of RF Output
J1-J4 Isolation Isolation Low Loss
20pF 20nH 20pF
100 20nH 20pF
20pF J4 RF OUTPUT
20pF
J2 RF OUTPUT
Handling Considerations
Cleanliness: These chips should be handled in a clean environment. . Electro-Static Sensitivity: The MA4SW Series PIN diode switches are ESD, Class 1A sensitive (HBM). Proper ESD precautions should be taken.
5
20pF
20nH
J3 BIAS 20pF
J3 RF OUTPUT
Notes: 1. RLC values are for an operation frequency of 2-18GHz and bias current of 20mA per diode.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant
Rev. V7
Wire Bonding
Thermosonic wedge bonding using 0.003" x 0.00025" ribbon or 0.001" diameter gold wire is recommended. A heat stage temperature of 150oC and a force of 18 to 22 grams should be used. If ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. RF bond wires should be kept as short as possible.
Chip Mounting
The HMIC switches have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. Mounting surface must be clean and flat. Eutectic Die Attachment: An 80/20, gold-tin, eutectic solder preform is recommended with a work surface temperature of 255oC and a tool tip temperature of 265oC. When hot gas is applied, the temperature at the chip should be 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 20 seconds. No more than three seconds should be required for attachment. Solders rich in tin should not be used. Epoxy Die Attachment: A minimum amount of epoxy, 1-2 mils thick, should be used to attach chip. A thin epoxy fillet should be visible around the outer perimeter of the chip after placement. Cure epoxy per product instructions. Typically 150C for 1 hour.
MA4SW110 Chip Outline Drawing1,2
DIM INCHES MIN. A B C D E F G H 0.014 0.025 MAX. 0.018 0.029 MIN. 0.35 0.64 MM MAX. 0.45 0.74
0.008 REF 0.004 0.006
0.20 REF 0.10 0.15
0.004 REF 0.003 REF 0.003 REF 0.020 REF
0.10 REF 0.08 REF 0.08 REF 0.52 REF
Notes:
1. 2.
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
Topside and backside metallization is gold , 2.5m thick typical. Yellow areas indicate wire bonding pads
changes to the product(s) or information contained herein without notice.
MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant
Rev. V7
MA4SW210 Chip Outline Drawing1,2
DIM MIN. A B C D E F G H 0.029 0.004
INCHES MAX. 0.033 0.006 MIN. 0.73 0.10
MM MAX. 0.83 0.15 0.10 REF 0.13 REF 0.23 REF 0.58 REF 0.17 REF 0.10 REF
0.004 REF 0.005 REF 0.009 REF 0.023 REF 0.007 REF 0.004 REF
Notes:
1. 2. Topside and backside metallization is gold , 2.5m thick typical. Yellow areas indicate wire bonding pads
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4SW110 MA4SW210 MA4SW310 HMICTM Silicon PIN Diode Switches RoHS Compliant
Rev. V7
MA4SW310 Chip Outline Drawing 1, 2
E
DIM MIN. A B C D E F G H J
INCHES MAX. MIN. 0.046 0.050 0.036 0.040 0.019 REF 0.014 REF 0.004 REF 0.005 REF 0.004 0.006 0.005 REF 0.004 REF
MM MAX. 1.16 1.26 0.92 1.02 0.48 REF 0.36 REF 0.10 REF 0.13 REF 0.10 0.15 0.12 REF 0.10 REF
Notes:
1. 2. Topside and backside metallization is gold , 2.5m thick typical. Yellow areas indicate wire bonding pads
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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